Optical switching of defect charge states in 4H-SiC

We demonstrate optically induced switching between bright and dark charged divacancy defects in 4H-SiC. Photoluminescence excitation and time-resolved photoluminescence measurements reveal the excitation conditions for such charge conversion. For an energy below 1.3 eV (above 950 nm), the PL is supp...

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Detalles Bibliográficos
Autores principales: Golter, D. A., Lai, C. W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5645325/
https://www.ncbi.nlm.nih.gov/pubmed/29042675
http://dx.doi.org/10.1038/s41598-017-13813-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5645325/
https://www.ncbi.nlm.nih.gov/pubmed/29042675
http://dx.doi.org/10.1038/s41598-017-13813-2

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