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Optical switching of defect charge states in 4H-SiC
We demonstrate optically induced switching between bright and dark charged divacancy defects in 4H-SiC. Photoluminescence excitation and time-resolved photoluminescence measurements reveal the excitation conditions for such charge conversion. For an energy below 1.3 eV (above 950 nm), the PL is supp...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5645325/ https://www.ncbi.nlm.nih.gov/pubmed/29042675 http://dx.doi.org/10.1038/s41598-017-13813-2 |