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Experimental realization of two-dimensional Dirac nodal line fermions in monolayer Cu(2)Si

Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau level...

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Detalles Bibliográficos
Autores principales: Feng, Baojie, Fu, Botao, Kasamatsu, Shusuke, Ito, Suguru, Cheng, Peng, Liu, Cheng-Cheng, Feng, Ya, Wu, Shilong, Mahatha, Sanjoy K., Sheverdyaeva, Polina, Moras, Paolo, Arita, Masashi, Sugino, Osamu, Chiang, Tai-Chang, Shimada, Kenya, Miyamoto, Koji, Okuda, Taichi, Wu, Kehui, Chen, Lan, Yao, Yugui, Matsuda, Iwao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5647340/
https://www.ncbi.nlm.nih.gov/pubmed/29044100
http://dx.doi.org/10.1038/s41467-017-01108-z
Descripción
Sumario:Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn(4), ZrSiS, TlTaSe(2) and PbTaSe(2). However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu(2)Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu(2)Si form two concentric loops centred around the Γ point and are protected by mirror reflection symmetry. Our results establish Cu(2)Si as a platform to study the novel physical properties in two-dimensional Dirac materials and provide opportunities to realize high-speed low-dissipation devices.