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Growth-Induced In-Plane Uniaxial Anisotropy in V(2)O(3)/Ni Films

We report on a strain-induced and temperature dependent uniaxial anisotropy in V(2)O(3)/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identif...

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Detalles Bibliográficos
Autores principales: Gilbert, Dustin A., Ramírez, Juan Gabriel, Saerbeck, T., Trastoy, J., Schuller, Ivan K., Liu, Kai, de la Venta, J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5647448/
https://www.ncbi.nlm.nih.gov/pubmed/29044131
http://dx.doi.org/10.1038/s41598-017-12690-z
Descripción
Sumario:We report on a strain-induced and temperature dependent uniaxial anisotropy in V(2)O(3)/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the V(2)O(3); atomic force and scanning electron microscopy reveal oriented rips in the film microstructure. Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial magnetic easy axis along the rips. Comparison with films grown on sapphire without rips shows a combined contribution from strain and microstructure in the V(2)O(3)/Ni films. Magnetization reversal characteristics captured by angular-dependent first order reversal curve measurements indicate a strong domain wall pinning along the direction orthogonal to the rips, inducing an angular-dependent change in the reversal mechanism. The resultant anisotropy is tunable with temperature and is most pronounced at room temperature, which is beneficial for potential device applications.