Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO(2) (100) Substrates

M-plane GaN thin films were grown on LiAlO(2) substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a...

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Detalles Bibliográficos
Autores principales: Lin, Yu-Chiao, Lo, Ikai, Shih, Hui-Chun, Chou, Mitch M. C., Schaadt, D. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi 2017
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5664351/
https://www.ncbi.nlm.nih.gov/pubmed/29109806
http://dx.doi.org/10.1155/2017/2362084
Descripción
Sumario:M-plane GaN thin films were grown on LiAlO(2) substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [11 [Formula: see text] 0]. According to high-resolution X-ray diffraction analysis, Li(5)GaO(4) was observed on the interface between GaN and LiAlO(2) substrate. The formation of Li(5)GaO(4) would influence the surface morphology and crystal quality.

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