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Effect of Ge Nanocrystals on 1.54 μm Photoluminescence Enhancement in Er(2)O(3):ZnO and Ge Co-Sputtered Films

Photoluminescence (PL) of Er and Ge co-doped ZnO films synthesized by radio frequency magnetron co-sputtering was investigated. X-ray diffraction (XRD) patterns showed that the annealing process at 400–800 °C led to the formation of nanocrystal (nc) Ge. Samples containing nc-Ge showed a strong visib...

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Detalles Bibliográficos
Autores principales: Fan, Ranran, Lu, Fei, Li, Kaikai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666476/
https://www.ncbi.nlm.nih.gov/pubmed/29019909
http://dx.doi.org/10.3390/nano7100311

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