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On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact...

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Autores principales: Li, Luping, Zhang, Yonghui, Xu, Shu, Bi, Wengang, Zhang, Zi-Hui, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5667027/
https://www.ncbi.nlm.nih.gov/pubmed/29073738
http://dx.doi.org/10.3390/ma10101221
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author Li, Luping
Zhang, Yonghui
Xu, Shu
Bi, Wengang
Zhang, Zi-Hui
Kuo, Hao-Chung
author_facet Li, Luping
Zhang, Yonghui
Xu, Shu
Bi, Wengang
Zhang, Zi-Hui
Kuo, Hao-Chung
author_sort Li, Luping
collection PubMed
description The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.
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spelling pubmed-56670272017-11-09 On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes Li, Luping Zhang, Yonghui Xu, Shu Bi, Wengang Zhang, Zi-Hui Kuo, Hao-Chung Materials (Basel) Review The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. MDPI 2017-10-24 /pmc/articles/PMC5667027/ /pubmed/29073738 http://dx.doi.org/10.3390/ma10101221 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Li, Luping
Zhang, Yonghui
Xu, Shu
Bi, Wengang
Zhang, Zi-Hui
Kuo, Hao-Chung
On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
title On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
title_full On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
title_fullStr On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
title_full_unstemmed On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
title_short On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
title_sort on the hole injection for iii-nitride based deep ultraviolet light-emitting diodes
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5667027/
https://www.ncbi.nlm.nih.gov/pubmed/29073738
http://dx.doi.org/10.3390/ma10101221
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