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3D Defect Localization on Exothermic Faults within Multi-Layered Structures Using Lock-In Thermography: An Experimental and Numerical Approach

Micro-electronic devices are increasingly incorporating miniature multi-layered integrated architectures. However, the localization of faults in three-dimensional structure remains challenging. This study involved the experimental and numerical estimation of the depth of a thermally active heating s...

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Autores principales: Bae, Ji Yong, Lee, Kye-Sung, Hur, Hwan, Nam, Ki-Hwan, Hong, Suk-Ju, Lee, Ah-Yeong, Chang, Ki Soo, Kim, Geon-Hee, Kim, Ghiseok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5677311/
https://www.ncbi.nlm.nih.gov/pubmed/29027955
http://dx.doi.org/10.3390/s17102331
_version_ 1783277215638618112
author Bae, Ji Yong
Lee, Kye-Sung
Hur, Hwan
Nam, Ki-Hwan
Hong, Suk-Ju
Lee, Ah-Yeong
Chang, Ki Soo
Kim, Geon-Hee
Kim, Ghiseok
author_facet Bae, Ji Yong
Lee, Kye-Sung
Hur, Hwan
Nam, Ki-Hwan
Hong, Suk-Ju
Lee, Ah-Yeong
Chang, Ki Soo
Kim, Geon-Hee
Kim, Ghiseok
author_sort Bae, Ji Yong
collection PubMed
description Micro-electronic devices are increasingly incorporating miniature multi-layered integrated architectures. However, the localization of faults in three-dimensional structure remains challenging. This study involved the experimental and numerical estimation of the depth of a thermally active heating source buried in multi-layered silicon wafer architecture by using both phase information from an infrared microscopy and finite element simulation. Infrared images were acquired and real-time processed by a lock-in method. It is well known that the lock-in method can increasingly improve detection performance by enhancing the spatial and thermal resolution of measurements. Operational principle of the lock-in method is discussed, and it is represented that phase shift of the thermal emission from a silicon wafer stacked heat source chip (SSHSC) specimen can provide good metrics for the depth of the heat source buried in SSHSCs. Depth was also estimated by analyzing the transient thermal responses using the coupled electro-thermal simulations. Furthermore, the effects of the volumetric heat source configuration mimicking the 3D through silicon via integration package were investigated. Both the infrared microscopic imaging with the lock-in method and FE simulation were potentially useful for 3D isolation of exothermic faults and their depth estimation for multi-layered structures, especially in packaged semiconductors.
format Online
Article
Text
id pubmed-5677311
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-56773112017-11-17 3D Defect Localization on Exothermic Faults within Multi-Layered Structures Using Lock-In Thermography: An Experimental and Numerical Approach Bae, Ji Yong Lee, Kye-Sung Hur, Hwan Nam, Ki-Hwan Hong, Suk-Ju Lee, Ah-Yeong Chang, Ki Soo Kim, Geon-Hee Kim, Ghiseok Sensors (Basel) Article Micro-electronic devices are increasingly incorporating miniature multi-layered integrated architectures. However, the localization of faults in three-dimensional structure remains challenging. This study involved the experimental and numerical estimation of the depth of a thermally active heating source buried in multi-layered silicon wafer architecture by using both phase information from an infrared microscopy and finite element simulation. Infrared images were acquired and real-time processed by a lock-in method. It is well known that the lock-in method can increasingly improve detection performance by enhancing the spatial and thermal resolution of measurements. Operational principle of the lock-in method is discussed, and it is represented that phase shift of the thermal emission from a silicon wafer stacked heat source chip (SSHSC) specimen can provide good metrics for the depth of the heat source buried in SSHSCs. Depth was also estimated by analyzing the transient thermal responses using the coupled electro-thermal simulations. Furthermore, the effects of the volumetric heat source configuration mimicking the 3D through silicon via integration package were investigated. Both the infrared microscopic imaging with the lock-in method and FE simulation were potentially useful for 3D isolation of exothermic faults and their depth estimation for multi-layered structures, especially in packaged semiconductors. MDPI 2017-10-13 /pmc/articles/PMC5677311/ /pubmed/29027955 http://dx.doi.org/10.3390/s17102331 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Bae, Ji Yong
Lee, Kye-Sung
Hur, Hwan
Nam, Ki-Hwan
Hong, Suk-Ju
Lee, Ah-Yeong
Chang, Ki Soo
Kim, Geon-Hee
Kim, Ghiseok
3D Defect Localization on Exothermic Faults within Multi-Layered Structures Using Lock-In Thermography: An Experimental and Numerical Approach
title 3D Defect Localization on Exothermic Faults within Multi-Layered Structures Using Lock-In Thermography: An Experimental and Numerical Approach
title_full 3D Defect Localization on Exothermic Faults within Multi-Layered Structures Using Lock-In Thermography: An Experimental and Numerical Approach
title_fullStr 3D Defect Localization on Exothermic Faults within Multi-Layered Structures Using Lock-In Thermography: An Experimental and Numerical Approach
title_full_unstemmed 3D Defect Localization on Exothermic Faults within Multi-Layered Structures Using Lock-In Thermography: An Experimental and Numerical Approach
title_short 3D Defect Localization on Exothermic Faults within Multi-Layered Structures Using Lock-In Thermography: An Experimental and Numerical Approach
title_sort 3d defect localization on exothermic faults within multi-layered structures using lock-in thermography: an experimental and numerical approach
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5677311/
https://www.ncbi.nlm.nih.gov/pubmed/29027955
http://dx.doi.org/10.3390/s17102331
work_keys_str_mv AT baejiyong 3ddefectlocalizationonexothermicfaultswithinmultilayeredstructuresusinglockinthermographyanexperimentalandnumericalapproach
AT leekyesung 3ddefectlocalizationonexothermicfaultswithinmultilayeredstructuresusinglockinthermographyanexperimentalandnumericalapproach
AT hurhwan 3ddefectlocalizationonexothermicfaultswithinmultilayeredstructuresusinglockinthermographyanexperimentalandnumericalapproach
AT namkihwan 3ddefectlocalizationonexothermicfaultswithinmultilayeredstructuresusinglockinthermographyanexperimentalandnumericalapproach
AT hongsukju 3ddefectlocalizationonexothermicfaultswithinmultilayeredstructuresusinglockinthermographyanexperimentalandnumericalapproach
AT leeahyeong 3ddefectlocalizationonexothermicfaultswithinmultilayeredstructuresusinglockinthermographyanexperimentalandnumericalapproach
AT changkisoo 3ddefectlocalizationonexothermicfaultswithinmultilayeredstructuresusinglockinthermographyanexperimentalandnumericalapproach
AT kimgeonhee 3ddefectlocalizationonexothermicfaultswithinmultilayeredstructuresusinglockinthermographyanexperimentalandnumericalapproach
AT kimghiseok 3ddefectlocalizationonexothermicfaultswithinmultilayeredstructuresusinglockinthermographyanexperimentalandnumericalapproach