Band Gap Engineering of Hexagonal SnSe(2) Nanostructured Thin Films for Infra-Red Photodetection

We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe(2) nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is ~2.04 eV similar to that of monolayer, whereas the band gap is approximately ~1.2 eV simil...

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Detalles Bibliográficos
Autores principales: Mukhokosi, Emma P., Krupanidhi, Saluru B., Nanda, Karuna K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5680184/
https://www.ncbi.nlm.nih.gov/pubmed/29123219
http://dx.doi.org/10.1038/s41598-017-15519-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5680184/
https://www.ncbi.nlm.nih.gov/pubmed/29123219
http://dx.doi.org/10.1038/s41598-017-15519-x

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