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The photoelastic coefficient [Formula: see text] of H(+) implanted GaAs as a function of defect density
The photoelastic phenomenon has been widely investigated as a fundamental elastooptical property of solids. This effect has been applied extensively to study stress distribution in lattice-mismatched semiconductor heterostructures. GaAs based optoelectronic devices (e.g. solar cells, modulators, det...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5680326/ https://www.ncbi.nlm.nih.gov/pubmed/29123121 http://dx.doi.org/10.1038/s41598-017-14903-x |