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Changes of the absorption cross section of Si nanocrystals with temperature and distance

The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of excitation intensity-dependent PL kinetics under mo...

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Detalles Bibliográficos
Autores principales:	Greben, Michael, Khoroshyy, Petro, Gutsch, Sebastian, Hiller, Daniel, Zacharias, Margit, Valenta, Jan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2017
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5687048/ https://www.ncbi.nlm.nih.gov/pubmed/29181288 http://dx.doi.org/10.3762/bjnano.8.231

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