Cargando…
Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge(1−x)Sn(x) epilayers
The revival of interest in Ge(1−x)Sn(x) alloys with x ≥ 10% is mainly owed to the recent demonstration of optical gain in this group-IV heterosystem. Yet, Ge and Sn are immiscible over about 98% of the composition range, which renders epilayers based on this material system inherently metastable. He...
Autores principales: | Groiss, Heiko, Glaser, Martin, Schatzl, Magdalena, Brehm, Moritz, Gerthsen, Dagmar, Roth, Dietmar, Bauer, Peter, Schäffler, Friedrich |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5700949/ https://www.ncbi.nlm.nih.gov/pubmed/29170483 http://dx.doi.org/10.1038/s41598-017-16356-8 |
Ejemplares similares
-
Lasing from Glassy Ge Quantum Dots in Crystalline Si
por: Grydlik, Martyna, et al.
Publicado: (2016) -
Tables of Chebyshev Polynomials Sn(x) and Cn(x)
por: National Bureau of Standards. Washington, DC
Publicado: (1952) -
Stretching the Equilibrium Limit of Sn in Ge(1–x)Sn(x) Nanowires: Implications for
Field Effect Transistors
por: Biswas, Subhajit, et al.
Publicado: (2021) -
Hierarchical Nanoporous Sn/SnO(x) Systems Obtained by Anodic Oxidation of Electrochemically Deposited Sn Nanofoams
por: Gurgul, Magdalena, et al.
Publicado: (2020) -
Formation of precipitates in off-stoichiometric Ni–Mn–Sn Heusler alloys probed through the induced Sn-moment
por: Eggert, Benedikt, et al.
Publicado: (2023)