Gate-tunable large magnetoresistance in an all-semiconductor spin valve device

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconduc...

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Detalles Bibliográficos
Autores principales: Oltscher, M., Eberle, F., Kuczmik, T., Bayer, A., Schuh, D., Bougeard, D., Ciorga, M., Weiss, D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5702618/
https://www.ncbi.nlm.nih.gov/pubmed/29176607
http://dx.doi.org/10.1038/s41467-017-01933-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5702618/
https://www.ncbi.nlm.nih.gov/pubmed/29176607
http://dx.doi.org/10.1038/s41467-017-01933-2

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