Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory

The crystal grain size of CH(3)NH(3)PbI(3) (MAPbI(3)) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI(3) OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in(2) storage capacity, >600 cycles endurance, >10(4) s data retention time, ~0.7 V set, and ~−0.61 V re-set bias voltage.