Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory

The crystal grain size of CH(3)NH(3)PbI(3) (MAPbI(3)) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MA...

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Autores principales: Heo, Jin Hyuck, Shin, Dong Hee, Moon, Sang Hwa, Lee, Min Ho, Kim, Do Hun, Oh, Seol Hee, Jo, William, Im, Sang Hyuk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5707385/
https://www.ncbi.nlm.nih.gov/pubmed/29185484
http://dx.doi.org/10.1038/s41598-017-16805-4
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author Heo, Jin Hyuck
Shin, Dong Hee
Moon, Sang Hwa
Lee, Min Ho
Kim, Do Hun
Oh, Seol Hee
Jo, William
Im, Sang Hyuk
author_facet Heo, Jin Hyuck
Shin, Dong Hee
Moon, Sang Hwa
Lee, Min Ho
Kim, Do Hun
Oh, Seol Hee
Jo, William
Im, Sang Hyuk
author_sort Heo, Jin Hyuck
collection PubMed
description The crystal grain size of CH(3)NH(3)PbI(3) (MAPbI(3)) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI(3) OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in(2) storage capacity, >600 cycles endurance, >10(4) s data retention time, ~0.7 V set, and ~−0.61 V re-set bias voltage.
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spelling pubmed-57073852017-12-06 Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory Heo, Jin Hyuck Shin, Dong Hee Moon, Sang Hwa Lee, Min Ho Kim, Do Hun Oh, Seol Hee Jo, William Im, Sang Hyuk Sci Rep Article The crystal grain size of CH(3)NH(3)PbI(3) (MAPbI(3)) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI(3) OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in(2) storage capacity, >600 cycles endurance, >10(4) s data retention time, ~0.7 V set, and ~−0.61 V re-set bias voltage. Nature Publishing Group UK 2017-11-29 /pmc/articles/PMC5707385/ /pubmed/29185484 http://dx.doi.org/10.1038/s41598-017-16805-4 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Heo, Jin Hyuck
Shin, Dong Hee
Moon, Sang Hwa
Lee, Min Ho
Kim, Do Hun
Oh, Seol Hee
Jo, William
Im, Sang Hyuk
Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory
title Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory
title_full Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory
title_fullStr Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory
title_full_unstemmed Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory
title_short Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory
title_sort memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5707385/
https://www.ncbi.nlm.nih.gov/pubmed/29185484
http://dx.doi.org/10.1038/s41598-017-16805-4
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