Interface and material engineering for zigzag slab lasers

Laser damage of zigzag slab lasers occurs at interface between laser crystal and SiO(2) film. Although an additional HfO(2) layer could be used to manipulate electric-field on the crystal-film interface, their high absorption and polycrystalline structure were unacceptable. SiO(2) was then doped in HfO(2) to suppress its crystallization and to achieve low absorption by annealing. Hf(x)Si(1−x)O(2) nanocomposite layers were then inserted between laser crystal and SiO(2) film to minimize electric-field at crystal-film interface. Laser damage resistance of this new architecture is two times higher than that of traditional zigzag slab lasers.