Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes

The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu(+3) ion is decomposed in a multiple level system, which includes the carrier transport...

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Detalles Bibliográficos
Autores principales: Fragkos, Ioannis E., Dierolf, Volkmar, Fujiwara, Yasufumi, Tansu, Nelson
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5711846/
https://www.ncbi.nlm.nih.gov/pubmed/29196749
http://dx.doi.org/10.1038/s41598-017-17033-6
Descripción
Sumario:The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu(+3) ion is decomposed in a multiple level system, which includes the carrier transport phenomena across the GaN/GaN:Eu/GaN active region of the device, and the interactions among traps, Eu(+3) ions and the GaN host. The identification and analysis of the limiting factors of the IQE are accomplished through the CIE model. The CIE model provides a guidance for high IQE in the electrically-driven GaN:Eu based red light emitters.

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