Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes

The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu(+3) ion is decomposed in a multiple level system, which includes the carrier transport...

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Autores principales: Fragkos, Ioannis E., Dierolf, Volkmar, Fujiwara, Yasufumi, Tansu, Nelson
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5711846/
https://www.ncbi.nlm.nih.gov/pubmed/29196749
http://dx.doi.org/10.1038/s41598-017-17033-6
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author Fragkos, Ioannis E.
Dierolf, Volkmar
Fujiwara, Yasufumi
Tansu, Nelson
author_facet Fragkos, Ioannis E.
Dierolf, Volkmar
Fujiwara, Yasufumi
Tansu, Nelson
author_sort Fragkos, Ioannis E.
collection PubMed
description The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu(+3) ion is decomposed in a multiple level system, which includes the carrier transport phenomena across the GaN/GaN:Eu/GaN active region of the device, and the interactions among traps, Eu(+3) ions and the GaN host. The identification and analysis of the limiting factors of the IQE are accomplished through the CIE model. The CIE model provides a guidance for high IQE in the electrically-driven GaN:Eu based red light emitters.
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spelling pubmed-57118462017-12-06 Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes Fragkos, Ioannis E. Dierolf, Volkmar Fujiwara, Yasufumi Tansu, Nelson Sci Rep Article The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu(+3) ion is decomposed in a multiple level system, which includes the carrier transport phenomena across the GaN/GaN:Eu/GaN active region of the device, and the interactions among traps, Eu(+3) ions and the GaN host. The identification and analysis of the limiting factors of the IQE are accomplished through the CIE model. The CIE model provides a guidance for high IQE in the electrically-driven GaN:Eu based red light emitters. Nature Publishing Group UK 2017-12-01 /pmc/articles/PMC5711846/ /pubmed/29196749 http://dx.doi.org/10.1038/s41598-017-17033-6 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Fragkos, Ioannis E.
Dierolf, Volkmar
Fujiwara, Yasufumi
Tansu, Nelson
Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes
title Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes
title_full Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes
title_fullStr Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes
title_full_unstemmed Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes
title_short Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes
title_sort physics of efficiency droop in gan:eu light-emitting diodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5711846/
https://www.ncbi.nlm.nih.gov/pubmed/29196749
http://dx.doi.org/10.1038/s41598-017-17033-6
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