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Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes

The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu(+3) ion is decomposed in a multiple level system, which includes the carrier transport...

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Detalles Bibliográficos
Autores principales:	Fragkos, Ioannis E., Dierolf, Volkmar, Fujiwara, Yasufumi, Tansu, Nelson
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5711846/ https://www.ncbi.nlm.nih.gov/pubmed/29196749 http://dx.doi.org/10.1038/s41598-017-17033-6

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