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Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS(2)

The stronger photoluminescence (PL) in chemical vapor deposition (CVD) grown monolayer MoS(2) has been attributed to its high crystal quality compared with that in mechanically exfoliated (ME) crystal, which is contrary to the cognition that the ME crystal usually have better crystal quality than th...

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Autores principales: Sun, Linfeng, Zhang, Xiaoming, Liu, Fucai, Shen, Youde, Fan, Xiaofeng, Zheng, Shoujun, Thong, John T. L., Liu, Zheng, Yang, Shengyuan A., Yang, Hui Ying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5711928/
https://www.ncbi.nlm.nih.gov/pubmed/29196652
http://dx.doi.org/10.1038/s41598-017-15577-1
_version_ 1783283119767420928
author Sun, Linfeng
Zhang, Xiaoming
Liu, Fucai
Shen, Youde
Fan, Xiaofeng
Zheng, Shoujun
Thong, John T. L.
Liu, Zheng
Yang, Shengyuan A.
Yang, Hui Ying
author_facet Sun, Linfeng
Zhang, Xiaoming
Liu, Fucai
Shen, Youde
Fan, Xiaofeng
Zheng, Shoujun
Thong, John T. L.
Liu, Zheng
Yang, Shengyuan A.
Yang, Hui Ying
author_sort Sun, Linfeng
collection PubMed
description The stronger photoluminescence (PL) in chemical vapor deposition (CVD) grown monolayer MoS(2) has been attributed to its high crystal quality compared with that in mechanically exfoliated (ME) crystal, which is contrary to the cognition that the ME crystal usually have better crystal quality than that of CVD grown one and it is expected with a better optical quality. In this report, the reason of abnormally strong PL spectra in CVD grown monolayer crystal is systematically investigated by studying the in-situ opto-electrical exploration at various environments for both of CVD and ME samples. High resolution transmission electron microscopy is used to investigate their crystal qualities. The stronger PL in CVD grown crystal is due to the high p-doping effect of adsorbates induced rebalance of exciton/trion emission. The first principle calculations are carried out to explore the interaction between adsorbates in ambient and defects sites in MoS(2), which is consistent to the experimental phenomenon and further confirm our proposed mechanisms.
format Online
Article
Text
id pubmed-5711928
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-57119282017-12-06 Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS(2) Sun, Linfeng Zhang, Xiaoming Liu, Fucai Shen, Youde Fan, Xiaofeng Zheng, Shoujun Thong, John T. L. Liu, Zheng Yang, Shengyuan A. Yang, Hui Ying Sci Rep Article The stronger photoluminescence (PL) in chemical vapor deposition (CVD) grown monolayer MoS(2) has been attributed to its high crystal quality compared with that in mechanically exfoliated (ME) crystal, which is contrary to the cognition that the ME crystal usually have better crystal quality than that of CVD grown one and it is expected with a better optical quality. In this report, the reason of abnormally strong PL spectra in CVD grown monolayer crystal is systematically investigated by studying the in-situ opto-electrical exploration at various environments for both of CVD and ME samples. High resolution transmission electron microscopy is used to investigate their crystal qualities. The stronger PL in CVD grown crystal is due to the high p-doping effect of adsorbates induced rebalance of exciton/trion emission. The first principle calculations are carried out to explore the interaction between adsorbates in ambient and defects sites in MoS(2), which is consistent to the experimental phenomenon and further confirm our proposed mechanisms. Nature Publishing Group UK 2017-12-01 /pmc/articles/PMC5711928/ /pubmed/29196652 http://dx.doi.org/10.1038/s41598-017-15577-1 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Sun, Linfeng
Zhang, Xiaoming
Liu, Fucai
Shen, Youde
Fan, Xiaofeng
Zheng, Shoujun
Thong, John T. L.
Liu, Zheng
Yang, Shengyuan A.
Yang, Hui Ying
Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS(2)
title Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS(2)
title_full Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS(2)
title_fullStr Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS(2)
title_full_unstemmed Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS(2)
title_short Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS(2)
title_sort vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer mos(2)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5711928/
https://www.ncbi.nlm.nih.gov/pubmed/29196652
http://dx.doi.org/10.1038/s41598-017-15577-1
work_keys_str_mv AT sunlinfeng vacuumleveldependentphotoluminescenceinchemicalvapordepositiongrownmonolayermos2
AT zhangxiaoming vacuumleveldependentphotoluminescenceinchemicalvapordepositiongrownmonolayermos2
AT liufucai vacuumleveldependentphotoluminescenceinchemicalvapordepositiongrownmonolayermos2
AT shenyoude vacuumleveldependentphotoluminescenceinchemicalvapordepositiongrownmonolayermos2
AT fanxiaofeng vacuumleveldependentphotoluminescenceinchemicalvapordepositiongrownmonolayermos2
AT zhengshoujun vacuumleveldependentphotoluminescenceinchemicalvapordepositiongrownmonolayermos2
AT thongjohntl vacuumleveldependentphotoluminescenceinchemicalvapordepositiongrownmonolayermos2
AT liuzheng vacuumleveldependentphotoluminescenceinchemicalvapordepositiongrownmonolayermos2
AT yangshengyuana vacuumleveldependentphotoluminescenceinchemicalvapordepositiongrownmonolayermos2
AT yanghuiying vacuumleveldependentphotoluminescenceinchemicalvapordepositiongrownmonolayermos2