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A two-dimensional Fe-doped SnS(2) magnetic semiconductor

Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS(2) monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and th...

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Detalles Bibliográficos
Autores principales: Li, Bo, Xing, Tao, Zhong, Mianzeng, Huang, Le, Lei, Na, Zhang, Jun, Li, Jingbo, Wei, Zhongming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5717146/
https://www.ncbi.nlm.nih.gov/pubmed/29208966
http://dx.doi.org/10.1038/s41467-017-02077-z
Descripción
Sumario:Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS(2) monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe(0.021)Sn(0.979)S(2) monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS(2) is diamagnetic, whereas Fe(0.021)Sn(0.979)S(2) exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ~31 K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS(2) monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS(2) has significant potential in future nanoelectronic, magnetic, and optoelectronic applications.