Cargando…
A two-dimensional Fe-doped SnS(2) magnetic semiconductor
Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS(2) monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and th...
Autores principales: | , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5717146/ https://www.ncbi.nlm.nih.gov/pubmed/29208966 http://dx.doi.org/10.1038/s41467-017-02077-z |
Sumario: | Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS(2) monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe(0.021)Sn(0.979)S(2) monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS(2) is diamagnetic, whereas Fe(0.021)Sn(0.979)S(2) exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ~31 K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS(2) monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS(2) has significant potential in future nanoelectronic, magnetic, and optoelectronic applications. |
---|