Cargando…
Strain induced band inversion and topological phase transition in methyl-decorated stanene film
The researches for new quantum spin Hall (QSH) insulators with large bulk energy gap are of much significance for their practical applications at room temperature in electronic devices with low-energy consumption. By means of first-principles calculations, we proposed that methyl-decorated stanene (...
Autores principales: | Wang, Dongchao, Chen, Li, Liu, Hongmei, Shi, Changmin, Wang, Xiaoli, Cui, Guangliang, Zhang, Pinhua, Chen, Yeqing |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5719061/ https://www.ncbi.nlm.nih.gov/pubmed/29213076 http://dx.doi.org/10.1038/s41598-017-17336-8 |
Ejemplares similares
-
Quantum spin Hall insulator in halogenated arsenene films with sizable energy gaps
por: Wang, Dongchao, et al.
Publicado: (2016) -
Topological edge states in high-temperature superconductiving FeSe/SrTiO(3) films with Te substitution
por: Chen, Li, et al.
Publicado: (2019) -
Highly sensitive H(2)S sensors based on Cu(2)O/Co(3)O(4) nano/microstructure heteroarrays at and below room temperature
por: Cui, Guangliang, et al.
Publicado: (2017) -
H(2)S detection at low temperatures by Cu(2)O/Fe(2)O(3) heterostructure ordered array sensors
por: Zhang, Pinhua, et al.
Publicado: (2020) -
Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates
por: Matusalem, Filipe, et al.
Publicado: (2017)