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First-principles study of nonmetal doped monolayer MoSe(2) for tunable electronic and photocatalytic properties

Recently, two dimensional transition metal dichalcogenides become popular research topics because of their unique crystal and electronic structure. In this work, the geometrical structure, electronic, electrical transport, redox potentials and photocatalytic properties of nonmetal (H, B, C, Si, N, P...

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Detalles Bibliográficos
Autores principales: Zhao, Yafei, Wang, Wei, Li, Can, He, Liang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5719077/
https://www.ncbi.nlm.nih.gov/pubmed/29213061
http://dx.doi.org/10.1038/s41598-017-17423-w
Descripción
Sumario:Recently, two dimensional transition metal dichalcogenides become popular research topics because of their unique crystal and electronic structure. In this work, the geometrical structure, electronic, electrical transport, redox potentials and photocatalytic properties of nonmetal (H, B, C, Si, N, P, As, O, S, Te, F, Cl, Br and I) doped monolayer MoSe(2) were investigated by first principle calculations. The binding energy indicates that nonmetal doped MoSe(2) are energetically favorable compared to Se vacancies, except B- and C-doped. We have found that nonmetal dopants with an even number of valence electrons doped MoSe(2) have p-type conductivity. On the contrary, nonmetal dopants with an odd number of valence electrons doped MoSe(2) have p-type or n-type conductivity; and they have better photocatalytic performance.