Stateful characterization of resistive switching TiO(2) with electron beam induced currents

Metal oxide resistive switches are increasingly important as possible artificial synapses in next-generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam-induced current measurements as...

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Detalles Bibliográficos
Autores principales: Hoskins, Brian D., Adam, Gina C., Strelcov, Evgheni, Zhitenev, Nikolai, Kolmakov, Andrei, Strukov, Dmitri B., McClelland, Jabez J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5719452/
https://www.ncbi.nlm.nih.gov/pubmed/29215006
http://dx.doi.org/10.1038/s41467-017-02116-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5719452/
https://www.ncbi.nlm.nih.gov/pubmed/29215006
http://dx.doi.org/10.1038/s41467-017-02116-9

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