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Stateful characterization of resistive switching TiO(2) with electron beam induced currents
Metal oxide resistive switches are increasingly important as possible artificial synapses in next-generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam-induced current measurements as...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5719452/ https://www.ncbi.nlm.nih.gov/pubmed/29215006 http://dx.doi.org/10.1038/s41467-017-02116-9 |