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Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques

Indium tin oxide (ITO) still remains as the main candidate for high-performance optoelectronic devices, but there is a vital requirement in the development of sol-gel based synthesizing techniques with regards to green environment and higher conductivity. Graphene/ITO transparent bi-film was synthes...

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Autores principales: Hemasiri, Bastian Waduge Naveen Harindu, Kim, Jae-Kwan, Lee, Ji-Myon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5736725/
https://www.ncbi.nlm.nih.gov/pubmed/29259236
http://dx.doi.org/10.1038/s41598-017-18063-w
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author Hemasiri, Bastian Waduge Naveen Harindu
Kim, Jae-Kwan
Lee, Ji-Myon
author_facet Hemasiri, Bastian Waduge Naveen Harindu
Kim, Jae-Kwan
Lee, Ji-Myon
author_sort Hemasiri, Bastian Waduge Naveen Harindu
collection PubMed
description Indium tin oxide (ITO) still remains as the main candidate for high-performance optoelectronic devices, but there is a vital requirement in the development of sol-gel based synthesizing techniques with regards to green environment and higher conductivity. Graphene/ITO transparent bi-film was synthesized by a two-step process: 10 wt. % tin-doped ITO thin films were produced by an environmentally friendly aqueous sol-gel spin coating technique with economical salts of In(NO(3))(3).H(2)O and SnCl(4), without using organic additives, on surface free energy enhanced (from 53.826 to 97.698 mJm(−2)) glass substrate by oxygen plasma treatment, which facilitated void-free continuous ITO film due to high surface wetting. The chemical vapor deposited monolayer graphene was transferred onto the synthesized ITO to enhance its electrical properties and it was capable of reducing sheet resistance over 12% while preserving the bi-film surface smoother. The ITO films contain the In(2)O(3) phase only and exhibit the polycrystalline nature of cubic structure with 14.35 ± 0.5 nm crystallite size. The graphene/ITO bi-film exhibits reproducible optical transparency with 88.66% transmittance at 550 nm wavelength, and electrical conductivity with sheet resistance of 117 Ω/sq which is much lower than that of individual sol-gel derived ITO film.
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spelling pubmed-57367252017-12-21 Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques Hemasiri, Bastian Waduge Naveen Harindu Kim, Jae-Kwan Lee, Ji-Myon Sci Rep Article Indium tin oxide (ITO) still remains as the main candidate for high-performance optoelectronic devices, but there is a vital requirement in the development of sol-gel based synthesizing techniques with regards to green environment and higher conductivity. Graphene/ITO transparent bi-film was synthesized by a two-step process: 10 wt. % tin-doped ITO thin films were produced by an environmentally friendly aqueous sol-gel spin coating technique with economical salts of In(NO(3))(3).H(2)O and SnCl(4), without using organic additives, on surface free energy enhanced (from 53.826 to 97.698 mJm(−2)) glass substrate by oxygen plasma treatment, which facilitated void-free continuous ITO film due to high surface wetting. The chemical vapor deposited monolayer graphene was transferred onto the synthesized ITO to enhance its electrical properties and it was capable of reducing sheet resistance over 12% while preserving the bi-film surface smoother. The ITO films contain the In(2)O(3) phase only and exhibit the polycrystalline nature of cubic structure with 14.35 ± 0.5 nm crystallite size. The graphene/ITO bi-film exhibits reproducible optical transparency with 88.66% transmittance at 550 nm wavelength, and electrical conductivity with sheet resistance of 117 Ω/sq which is much lower than that of individual sol-gel derived ITO film. Nature Publishing Group UK 2017-12-19 /pmc/articles/PMC5736725/ /pubmed/29259236 http://dx.doi.org/10.1038/s41598-017-18063-w Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Hemasiri, Bastian Waduge Naveen Harindu
Kim, Jae-Kwan
Lee, Ji-Myon
Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques
title Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques
title_full Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques
title_fullStr Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques
title_full_unstemmed Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques
title_short Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques
title_sort fabrication of highly conductive graphene/ito transparent bi-film through cvd and organic additives-free sol-gel techniques
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5736725/
https://www.ncbi.nlm.nih.gov/pubmed/29259236
http://dx.doi.org/10.1038/s41598-017-18063-w
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