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Insulator–metal transition in substrate-independent VO(2) thin film for phase-change devices

Vanadium has 11 oxide phases, with the binary VO(2) presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator–to–metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tet...

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Autores principales: Taha, Mohammad, Walia, Sumeet, Ahmed, Taimur, Headland, Daniel, Withayachumnankul, Withawat, Sriram, Sharath, Bhaskaran, Madhu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5738395/
https://www.ncbi.nlm.nih.gov/pubmed/29263388
http://dx.doi.org/10.1038/s41598-017-17937-3
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author Taha, Mohammad
Walia, Sumeet
Ahmed, Taimur
Headland, Daniel
Withayachumnankul, Withawat
Sriram, Sharath
Bhaskaran, Madhu
author_facet Taha, Mohammad
Walia, Sumeet
Ahmed, Taimur
Headland, Daniel
Withayachumnankul, Withawat
Sriram, Sharath
Bhaskaran, Madhu
author_sort Taha, Mohammad
collection PubMed
description Vanadium has 11 oxide phases, with the binary VO(2) presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator–to–metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO(2) a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO(2) synthesis have also been standing issues in VO(2) fabrication. Here, we address these major challenges in harnessing the functionality in VO(2) by demonstrating an approach that enables crystalline, switchable VO(2) on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO(2) on any substrate, thereby exploiting its untapped potential.
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spelling pubmed-57383952017-12-22 Insulator–metal transition in substrate-independent VO(2) thin film for phase-change devices Taha, Mohammad Walia, Sumeet Ahmed, Taimur Headland, Daniel Withayachumnankul, Withawat Sriram, Sharath Bhaskaran, Madhu Sci Rep Article Vanadium has 11 oxide phases, with the binary VO(2) presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator–to–metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO(2) a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO(2) synthesis have also been standing issues in VO(2) fabrication. Here, we address these major challenges in harnessing the functionality in VO(2) by demonstrating an approach that enables crystalline, switchable VO(2) on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO(2) on any substrate, thereby exploiting its untapped potential. Nature Publishing Group UK 2017-12-20 /pmc/articles/PMC5738395/ /pubmed/29263388 http://dx.doi.org/10.1038/s41598-017-17937-3 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Taha, Mohammad
Walia, Sumeet
Ahmed, Taimur
Headland, Daniel
Withayachumnankul, Withawat
Sriram, Sharath
Bhaskaran, Madhu
Insulator–metal transition in substrate-independent VO(2) thin film for phase-change devices
title Insulator–metal transition in substrate-independent VO(2) thin film for phase-change devices
title_full Insulator–metal transition in substrate-independent VO(2) thin film for phase-change devices
title_fullStr Insulator–metal transition in substrate-independent VO(2) thin film for phase-change devices
title_full_unstemmed Insulator–metal transition in substrate-independent VO(2) thin film for phase-change devices
title_short Insulator–metal transition in substrate-independent VO(2) thin film for phase-change devices
title_sort insulator–metal transition in substrate-independent vo(2) thin film for phase-change devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5738395/
https://www.ncbi.nlm.nih.gov/pubmed/29263388
http://dx.doi.org/10.1038/s41598-017-17937-3
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