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Electrically tunable metasurface perfect absorber for infrared frequencies

We theoretically investigate a metasurface perfect absorber based on indium-tin-oxide as active material. Our design scheme relies on conventional metal–oxide–semiconductor model and the Drude model. Inducing a voltage into the device causes a blue-shift of 50 nm in the reflectance spectrum in the i...

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Detalles Bibliográficos
Autores principales: Yoon, Gwanho, So, Sunae, Kim, Minkyung, Mun, Jungho, Ma, Renmin, Rho, Junsuk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Singapore 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5738463/
https://www.ncbi.nlm.nih.gov/pubmed/29291156
http://dx.doi.org/10.1186/s40580-017-0131-0
Descripción
Sumario:We theoretically investigate a metasurface perfect absorber based on indium-tin-oxide as active material. Our design scheme relies on conventional metal–oxide–semiconductor model and the Drude model. Inducing a voltage into the device causes a blue-shift of 50 nm in the reflectance spectrum in the infrared region. The total thickness of the device is only 3.5% of the working wavelength λ = 2.56 μm, and the rate of reflectance change reaches 5.16 at λ = 2.56 μm. Because the material that we use has advantages of easy fabrication and fast response, our design approach can be used for numerous applications on active plasmonic sensors and filters.