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Electrically tunable metasurface perfect absorber for infrared frequencies

We theoretically investigate a metasurface perfect absorber based on indium-tin-oxide as active material. Our design scheme relies on conventional metal–oxide–semiconductor model and the Drude model. Inducing a voltage into the device causes a blue-shift of 50 nm in the reflectance spectrum in the i...

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Detalles Bibliográficos
Autores principales: Yoon, Gwanho, So, Sunae, Kim, Minkyung, Mun, Jungho, Ma, Renmin, Rho, Junsuk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Singapore 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5738463/
https://www.ncbi.nlm.nih.gov/pubmed/29291156
http://dx.doi.org/10.1186/s40580-017-0131-0
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author Yoon, Gwanho
So, Sunae
Kim, Minkyung
Mun, Jungho
Ma, Renmin
Rho, Junsuk
author_facet Yoon, Gwanho
So, Sunae
Kim, Minkyung
Mun, Jungho
Ma, Renmin
Rho, Junsuk
author_sort Yoon, Gwanho
collection PubMed
description We theoretically investigate a metasurface perfect absorber based on indium-tin-oxide as active material. Our design scheme relies on conventional metal–oxide–semiconductor model and the Drude model. Inducing a voltage into the device causes a blue-shift of 50 nm in the reflectance spectrum in the infrared region. The total thickness of the device is only 3.5% of the working wavelength λ = 2.56 μm, and the rate of reflectance change reaches 5.16 at λ = 2.56 μm. Because the material that we use has advantages of easy fabrication and fast response, our design approach can be used for numerous applications on active plasmonic sensors and filters.
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spelling pubmed-57384632017-12-29 Electrically tunable metasurface perfect absorber for infrared frequencies Yoon, Gwanho So, Sunae Kim, Minkyung Mun, Jungho Ma, Renmin Rho, Junsuk Nano Converg Research We theoretically investigate a metasurface perfect absorber based on indium-tin-oxide as active material. Our design scheme relies on conventional metal–oxide–semiconductor model and the Drude model. Inducing a voltage into the device causes a blue-shift of 50 nm in the reflectance spectrum in the infrared region. The total thickness of the device is only 3.5% of the working wavelength λ = 2.56 μm, and the rate of reflectance change reaches 5.16 at λ = 2.56 μm. Because the material that we use has advantages of easy fabrication and fast response, our design approach can be used for numerous applications on active plasmonic sensors and filters. Springer Singapore 2017-12-21 /pmc/articles/PMC5738463/ /pubmed/29291156 http://dx.doi.org/10.1186/s40580-017-0131-0 Text en © The Author(s) 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Research
Yoon, Gwanho
So, Sunae
Kim, Minkyung
Mun, Jungho
Ma, Renmin
Rho, Junsuk
Electrically tunable metasurface perfect absorber for infrared frequencies
title Electrically tunable metasurface perfect absorber for infrared frequencies
title_full Electrically tunable metasurface perfect absorber for infrared frequencies
title_fullStr Electrically tunable metasurface perfect absorber for infrared frequencies
title_full_unstemmed Electrically tunable metasurface perfect absorber for infrared frequencies
title_short Electrically tunable metasurface perfect absorber for infrared frequencies
title_sort electrically tunable metasurface perfect absorber for infrared frequencies
topic Research
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5738463/
https://www.ncbi.nlm.nih.gov/pubmed/29291156
http://dx.doi.org/10.1186/s40580-017-0131-0
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