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Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor
Defect generation in oxide semiconductor thin-film transistors under high-voltage driving has not been studied in depth despite being a crucial bottleneck in the making of the integrated circuit utilized in an oxide semiconductor. Here we report on the origin of the asymmetrical transport characteri...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5740073/ https://www.ncbi.nlm.nih.gov/pubmed/29269745 http://dx.doi.org/10.1038/s41598-017-18420-9 |