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The Microstructure of Nanocrystalline TiB(2) Films Prepared by Chemical Vapor Deposition
Nanocrystalline titanium diboride (TiB(2)) ceramics films were prepared on a high purity graphite substrate via chemical vapor deposition (CVD). The substrate was synthesized by a gas mixture of TiCl(4), BCl(3), and H(2) under 1000 °C and 10 Pa. Properties and microstructures of TiB(2) films were al...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5744360/ https://www.ncbi.nlm.nih.gov/pubmed/29236061 http://dx.doi.org/10.3390/ma10121425 |
Sumario: | Nanocrystalline titanium diboride (TiB(2)) ceramics films were prepared on a high purity graphite substrate via chemical vapor deposition (CVD). The substrate was synthesized by a gas mixture of TiCl(4), BCl(3), and H(2) under 1000 °C and 10 Pa. Properties and microstructures of TiB(2) films were also examined. The as-deposited TiB(2) films had a nano-sized grain structure and the grain size was around 60 nm, which was determined by X-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. Further research found that a gas flow ratio of TiCl(4)/BCl(3) had an influence on the film properties and microstructures. The analyzed results illustrated that the grain size of the TiB(2) film obtained with a TiCl(4)/BCl(3) gas flow ratio of 1, was larger than the grain size of the as-prepared TiB(2) film prepared with a stoichiometric TiCl(4)/BCl(3) gas flow ratio of 0.5. In addition, the films deposited faster at excessive TiCl(4). However, under the condition of different TiCl(4)/BCl(3) gas flow ratios, all of the as-prepared TiB(2) films have a preferential orientation growth in the (100) direction. |
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