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Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology †

CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small pi...

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Autores principales: Sekine, Hiroshi, Kobayashi, Masahiro, Onuki, Yusuke, Kawabata, Kazunari, Tsuboi, Toshiki, Matsuno, Yasushi, Takahashi, Hidekazu, Inoue, Shunsuke, Ichikawa, Takeshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5750567/
https://www.ncbi.nlm.nih.gov/pubmed/29232824
http://dx.doi.org/10.3390/s17122860
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author Sekine, Hiroshi
Kobayashi, Masahiro
Onuki, Yusuke
Kawabata, Kazunari
Tsuboi, Toshiki
Matsuno, Yasushi
Takahashi, Hidekazu
Inoue, Shunsuke
Ichikawa, Takeshi
author_facet Sekine, Hiroshi
Kobayashi, Masahiro
Onuki, Yusuke
Kawabata, Kazunari
Tsuboi, Toshiki
Matsuno, Yasushi
Takahashi, Hidekazu
Inoue, Shunsuke
Ichikawa, Takeshi
author_sort Sekine, Hiroshi
collection PubMed
description CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small pixel pitch. The newly developed 3.4 µm pitch GS CIS solves this problem by using multiple accumulation shutter technology and the gentle slope light guide structure. As a result, the developed GS pixel achieves 1.8 e(−) temporal noise and 16,200 e(−) full well capacity with charge domain memory in 120 fps operation. The sensitivity and parasitic light sensitivity are 28,000 e(−)/lx·s and −89 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity are improved by the gentle slope light guide structure.
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spelling pubmed-57505672018-01-10 Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology † Sekine, Hiroshi Kobayashi, Masahiro Onuki, Yusuke Kawabata, Kazunari Tsuboi, Toshiki Matsuno, Yasushi Takahashi, Hidekazu Inoue, Shunsuke Ichikawa, Takeshi Sensors (Basel) Article CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small pixel pitch. The newly developed 3.4 µm pitch GS CIS solves this problem by using multiple accumulation shutter technology and the gentle slope light guide structure. As a result, the developed GS pixel achieves 1.8 e(−) temporal noise and 16,200 e(−) full well capacity with charge domain memory in 120 fps operation. The sensitivity and parasitic light sensitivity are 28,000 e(−)/lx·s and −89 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity are improved by the gentle slope light guide structure. MDPI 2017-12-09 /pmc/articles/PMC5750567/ /pubmed/29232824 http://dx.doi.org/10.3390/s17122860 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Sekine, Hiroshi
Kobayashi, Masahiro
Onuki, Yusuke
Kawabata, Kazunari
Tsuboi, Toshiki
Matsuno, Yasushi
Takahashi, Hidekazu
Inoue, Shunsuke
Ichikawa, Takeshi
Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology †
title Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology †
title_full Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology †
title_fullStr Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology †
title_full_unstemmed Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology †
title_short Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology †
title_sort development of gentle slope light guide structure in a 3.4 μm pixel pitch global shutter cmos image sensor with multiple accumulation shutter technology †
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5750567/
https://www.ncbi.nlm.nih.gov/pubmed/29232824
http://dx.doi.org/10.3390/s17122860
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