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Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology †
CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small pi...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5750567/ https://www.ncbi.nlm.nih.gov/pubmed/29232824 http://dx.doi.org/10.3390/s17122860 |
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author | Sekine, Hiroshi Kobayashi, Masahiro Onuki, Yusuke Kawabata, Kazunari Tsuboi, Toshiki Matsuno, Yasushi Takahashi, Hidekazu Inoue, Shunsuke Ichikawa, Takeshi |
author_facet | Sekine, Hiroshi Kobayashi, Masahiro Onuki, Yusuke Kawabata, Kazunari Tsuboi, Toshiki Matsuno, Yasushi Takahashi, Hidekazu Inoue, Shunsuke Ichikawa, Takeshi |
author_sort | Sekine, Hiroshi |
collection | PubMed |
description | CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small pixel pitch. The newly developed 3.4 µm pitch GS CIS solves this problem by using multiple accumulation shutter technology and the gentle slope light guide structure. As a result, the developed GS pixel achieves 1.8 e(−) temporal noise and 16,200 e(−) full well capacity with charge domain memory in 120 fps operation. The sensitivity and parasitic light sensitivity are 28,000 e(−)/lx·s and −89 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity are improved by the gentle slope light guide structure. |
format | Online Article Text |
id | pubmed-5750567 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-57505672018-01-10 Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology † Sekine, Hiroshi Kobayashi, Masahiro Onuki, Yusuke Kawabata, Kazunari Tsuboi, Toshiki Matsuno, Yasushi Takahashi, Hidekazu Inoue, Shunsuke Ichikawa, Takeshi Sensors (Basel) Article CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small pixel pitch. The newly developed 3.4 µm pitch GS CIS solves this problem by using multiple accumulation shutter technology and the gentle slope light guide structure. As a result, the developed GS pixel achieves 1.8 e(−) temporal noise and 16,200 e(−) full well capacity with charge domain memory in 120 fps operation. The sensitivity and parasitic light sensitivity are 28,000 e(−)/lx·s and −89 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity are improved by the gentle slope light guide structure. MDPI 2017-12-09 /pmc/articles/PMC5750567/ /pubmed/29232824 http://dx.doi.org/10.3390/s17122860 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Sekine, Hiroshi Kobayashi, Masahiro Onuki, Yusuke Kawabata, Kazunari Tsuboi, Toshiki Matsuno, Yasushi Takahashi, Hidekazu Inoue, Shunsuke Ichikawa, Takeshi Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology † |
title | Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology † |
title_full | Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology † |
title_fullStr | Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology † |
title_full_unstemmed | Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology † |
title_short | Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology † |
title_sort | development of gentle slope light guide structure in a 3.4 μm pixel pitch global shutter cmos image sensor with multiple accumulation shutter technology † |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5750567/ https://www.ncbi.nlm.nih.gov/pubmed/29232824 http://dx.doi.org/10.3390/s17122860 |
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