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Electrically reversible cracks in an intermetallic film controlled by an electric field

Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresis...

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Autores principales: Liu, Z. Q., Liu, J. H., Biegalski, M. D., Hu, J.-M., Shang, S. L., Ji, Y., Wang, J. M., Hsu, S. L., Wong, A. T., Cordill, M. J., Gludovatz, B., Marker, C., Yan, H., Feng, Z. X., You, L., Lin, M. W., Ward, T. Z., Liu, Z. K., Jiang, C. B., Chen, L. Q., Ritchie, R. O., Christen, H. M., Ramesh, R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5752679/
https://www.ncbi.nlm.nih.gov/pubmed/29298986
http://dx.doi.org/10.1038/s41467-017-02454-8
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author Liu, Z. Q.
Liu, J. H.
Biegalski, M. D.
Hu, J.-M.
Shang, S. L.
Ji, Y.
Wang, J. M.
Hsu, S. L.
Wong, A. T.
Cordill, M. J.
Gludovatz, B.
Marker, C.
Yan, H.
Feng, Z. X.
You, L.
Lin, M. W.
Ward, T. Z.
Liu, Z. K.
Jiang, C. B.
Chen, L. Q.
Ritchie, R. O.
Christen, H. M.
Ramesh, R.
author_facet Liu, Z. Q.
Liu, J. H.
Biegalski, M. D.
Hu, J.-M.
Shang, S. L.
Ji, Y.
Wang, J. M.
Hsu, S. L.
Wong, A. T.
Cordill, M. J.
Gludovatz, B.
Marker, C.
Yan, H.
Feng, Z. X.
You, L.
Lin, M. W.
Ward, T. Z.
Liu, Z. K.
Jiang, C. B.
Chen, L. Q.
Ritchie, R. O.
Christen, H. M.
Ramesh, R.
author_sort Liu, Z. Q.
collection PubMed
description Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on–off ratio of more than 10(8) is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 10(7) cycles under 10-μs pulses, without catastrophic failure of the film.
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spelling pubmed-57526792018-01-13 Electrically reversible cracks in an intermetallic film controlled by an electric field Liu, Z. Q. Liu, J. H. Biegalski, M. D. Hu, J.-M. Shang, S. L. Ji, Y. Wang, J. M. Hsu, S. L. Wong, A. T. Cordill, M. J. Gludovatz, B. Marker, C. Yan, H. Feng, Z. X. You, L. Lin, M. W. Ward, T. Z. Liu, Z. K. Jiang, C. B. Chen, L. Q. Ritchie, R. O. Christen, H. M. Ramesh, R. Nat Commun Article Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on–off ratio of more than 10(8) is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 10(7) cycles under 10-μs pulses, without catastrophic failure of the film. Nature Publishing Group UK 2018-01-03 /pmc/articles/PMC5752679/ /pubmed/29298986 http://dx.doi.org/10.1038/s41467-017-02454-8 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Liu, Z. Q.
Liu, J. H.
Biegalski, M. D.
Hu, J.-M.
Shang, S. L.
Ji, Y.
Wang, J. M.
Hsu, S. L.
Wong, A. T.
Cordill, M. J.
Gludovatz, B.
Marker, C.
Yan, H.
Feng, Z. X.
You, L.
Lin, M. W.
Ward, T. Z.
Liu, Z. K.
Jiang, C. B.
Chen, L. Q.
Ritchie, R. O.
Christen, H. M.
Ramesh, R.
Electrically reversible cracks in an intermetallic film controlled by an electric field
title Electrically reversible cracks in an intermetallic film controlled by an electric field
title_full Electrically reversible cracks in an intermetallic film controlled by an electric field
title_fullStr Electrically reversible cracks in an intermetallic film controlled by an electric field
title_full_unstemmed Electrically reversible cracks in an intermetallic film controlled by an electric field
title_short Electrically reversible cracks in an intermetallic film controlled by an electric field
title_sort electrically reversible cracks in an intermetallic film controlled by an electric field
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5752679/
https://www.ncbi.nlm.nih.gov/pubmed/29298986
http://dx.doi.org/10.1038/s41467-017-02454-8
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