Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature

A study on charge transport properties of thin film Fe-doped SrTiO(3) epitaxially grown on Nb-doped SrTiO(3) is reported. Electric measurements between 350 °C and 750 °C show a transition from predominant ionic to electronic conduction and lower conductivity of the thin films compared to the bulk of polycrystalline samples. Defect chemical changes at elevated temperature were investigated by applying a bias voltage. A model is described which successfully predicts additional features such as inductive loops or extra semicircles measureable by impedance spectroscopy as well as the complicated time dependence of electric DC-measurements. With this model it is also possible to calculate the negligibly small ionic conductivity next to the dominating electronic conductivity in the high temperature regime. The ionic conductivity is referenced by oxygen isotope depth profiling. Changes of resistive states in Fe-doped SrTiO(3) thin films at high temperature and moderate fields are compared to room temperature resistive switching phenomena at high electric fields. A conductive filament based switching process is observed at room temperature, and the capability for forming such filaments and their electric properties is further analysed using microelectrodes.