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Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors
Atomic-layer-deposition (ALD) of In(2)O(3) nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H(2)O(2)) as precursors. The In(2)O(3) films can be deposited preferentially at relatively low temperatures of 160–200 °C, exhibiting a stable growth rate of 1.4–1....
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5760491/ https://www.ncbi.nlm.nih.gov/pubmed/29318402 http://dx.doi.org/10.1186/s11671-017-2414-0 |