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Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Atomic-layer-deposition (ALD) of In(2)O(3) nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H(2)O(2)) as precursors. The In(2)O(3) films can be deposited preferentially at relatively low temperatures of 160–200 °C, exhibiting a stable growth rate of 1.4–1....

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Detalles Bibliográficos
Autores principales:	Ma, Qian, Zheng, He-Mei, Shao, Yan, Zhu, Bao, Liu, Wen-Jun, Ding, Shi-Jin, Zhang, David Wei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2018
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5760491/ https://www.ncbi.nlm.nih.gov/pubmed/29318402 http://dx.doi.org/10.1186/s11671-017-2414-0

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