Influence of In-Gap States on the Formation of Two-Dimensional Election Gas at ABO(3)/SrTiO(3) Interfaces

We explored in-gap states (IGSs) in perovskite oxide heterojunction films. We report that IGSs in these films play a crucial role in determining the formation and properties of interfacial two-dimensional electron gas (2DEG). We report that electron trapping by IGSs opposes charge transfer from the...

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Detalles Bibliográficos
Autores principales: Li, Cheng-Jian, Xue, Hong-Xia, Qu, Guo-Liang, Shen, Sheng-Chun, Hong, Yan-Peng, Wang, Xin-Xin, Liu, Ming-rui, Jiang, Wei-min, Badica, Petre, He, Lin, Dou, Rui-Fen, Xiong, Chang-Min, Lü, Wei-ming, Nie, Jia-Cai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5760580/
https://www.ncbi.nlm.nih.gov/pubmed/29317754
http://dx.doi.org/10.1038/s41598-017-18583-5
Descripción
Sumario:We explored in-gap states (IGSs) in perovskite oxide heterojunction films. We report that IGSs in these films play a crucial role in determining the formation and properties of interfacial two-dimensional electron gas (2DEG). We report that electron trapping by IGSs opposes charge transfer from the film to the interface. The IGS in films yielded insulating interfaces with polar discontinuity and explained low interface carrier density of conducting interfaces. An ion trapping model was proposed to explain the physics of the IGSs and some experimental findings, such as the unexpected formation of 2DEG at the initially insulating LaCrO(3)/SrTiO(3) interface and the influence of substitution layers on 2DEG.

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