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Influence of In-Gap States on the Formation of Two-Dimensional Election Gas at ABO(3)/SrTiO(3) Interfaces

We explored in-gap states (IGSs) in perovskite oxide heterojunction films. We report that IGSs in these films play a crucial role in determining the formation and properties of interfacial two-dimensional electron gas (2DEG). We report that electron trapping by IGSs opposes charge transfer from the...

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Detalles Bibliográficos
Autores principales:	Li, Cheng-Jian, Xue, Hong-Xia, Qu, Guo-Liang, Shen, Sheng-Chun, Hong, Yan-Peng, Wang, Xin-Xin, Liu, Ming-rui, Jiang, Wei-min, Badica, Petre, He, Lin, Dou, Rui-Fen, Xiong, Chang-Min, Lü, Wei-ming, Nie, Jia-Cai
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5760580/ https://www.ncbi.nlm.nih.gov/pubmed/29317754 http://dx.doi.org/10.1038/s41598-017-18583-5

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