Cargando…

A Collective Study on Modeling and Simulation of Resistive Random Access Memory

In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working designs and standardize its implementation across...

Descripción completa

Detalles Bibliográficos
Autores principales: Panda, Debashis, Sahu, Paritosh Piyush, Tseng, Tseung Yuen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5762646/
https://www.ncbi.nlm.nih.gov/pubmed/29322363
http://dx.doi.org/10.1186/s11671-017-2419-8