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A Collective Study on Modeling and Simulation of Resistive Random Access Memory
In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working designs and standardize its implementation across...
Autores principales: | Panda, Debashis, Sahu, Paritosh Piyush, Tseng, Tseung Yuen |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5762646/ https://www.ncbi.nlm.nih.gov/pubmed/29322363 http://dx.doi.org/10.1186/s11671-017-2419-8 |
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