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Graphene analogue in (111)-oriented BaBiO(3) bilayer heterostructures for topological electronics
Topological electronics is a new field that uses topological charges as current-carrying degrees of freedom. For topological electronics applications, systems should host topologically distinct phases to control the topological domain boundary through which the topological charges can flow. Due to t...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5765078/ https://www.ncbi.nlm.nih.gov/pubmed/29323233 http://dx.doi.org/10.1038/s41598-017-19090-3 |
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author | Kim, Rokyeon Yu, Jaejun Jin, Hosub |
author_facet | Kim, Rokyeon Yu, Jaejun Jin, Hosub |
author_sort | Kim, Rokyeon |
collection | PubMed |
description | Topological electronics is a new field that uses topological charges as current-carrying degrees of freedom. For topological electronics applications, systems should host topologically distinct phases to control the topological domain boundary through which the topological charges can flow. Due to their multiple Dirac cones and the π-Berry phase of each Dirac cone, graphene-like electronic structures constitute an ideal platform for topological electronics; graphene can provide various topological phases when incorporated with large spin-orbit coupling and mass-gap tunability via symmetry-breaking. Here, we propose that a (111)-oriented BaBiO(3) bilayer (BBL) sandwiched between large-gap perovskite oxides is a promising candidate for topological electronics by realizing a gap-tunable, and consequently a topology-tunable, graphene analogue. Depending on how neighboring perovskite spacers are chosen, the inversion symmetry of the BBL heterostructure can be either conserved or broken, leading to the quantum spin Hall (QSH) and quantum valley Hall (QVH) phases, respectively. BBL sandwiched by ferroelectric compounds enables switching of the QSH and QVH phases and generates the topological domain boundary. Given the abundant order parameters of the sandwiching oxides, the BBL can serve as versatile topological building blocks in oxide heterostructures. |
format | Online Article Text |
id | pubmed-5765078 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-57650782018-01-17 Graphene analogue in (111)-oriented BaBiO(3) bilayer heterostructures for topological electronics Kim, Rokyeon Yu, Jaejun Jin, Hosub Sci Rep Article Topological electronics is a new field that uses topological charges as current-carrying degrees of freedom. For topological electronics applications, systems should host topologically distinct phases to control the topological domain boundary through which the topological charges can flow. Due to their multiple Dirac cones and the π-Berry phase of each Dirac cone, graphene-like electronic structures constitute an ideal platform for topological electronics; graphene can provide various topological phases when incorporated with large spin-orbit coupling and mass-gap tunability via symmetry-breaking. Here, we propose that a (111)-oriented BaBiO(3) bilayer (BBL) sandwiched between large-gap perovskite oxides is a promising candidate for topological electronics by realizing a gap-tunable, and consequently a topology-tunable, graphene analogue. Depending on how neighboring perovskite spacers are chosen, the inversion symmetry of the BBL heterostructure can be either conserved or broken, leading to the quantum spin Hall (QSH) and quantum valley Hall (QVH) phases, respectively. BBL sandwiched by ferroelectric compounds enables switching of the QSH and QVH phases and generates the topological domain boundary. Given the abundant order parameters of the sandwiching oxides, the BBL can serve as versatile topological building blocks in oxide heterostructures. Nature Publishing Group UK 2018-01-11 /pmc/articles/PMC5765078/ /pubmed/29323233 http://dx.doi.org/10.1038/s41598-017-19090-3 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Kim, Rokyeon Yu, Jaejun Jin, Hosub Graphene analogue in (111)-oriented BaBiO(3) bilayer heterostructures for topological electronics |
title | Graphene analogue in (111)-oriented BaBiO(3) bilayer heterostructures for topological electronics |
title_full | Graphene analogue in (111)-oriented BaBiO(3) bilayer heterostructures for topological electronics |
title_fullStr | Graphene analogue in (111)-oriented BaBiO(3) bilayer heterostructures for topological electronics |
title_full_unstemmed | Graphene analogue in (111)-oriented BaBiO(3) bilayer heterostructures for topological electronics |
title_short | Graphene analogue in (111)-oriented BaBiO(3) bilayer heterostructures for topological electronics |
title_sort | graphene analogue in (111)-oriented babio(3) bilayer heterostructures for topological electronics |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5765078/ https://www.ncbi.nlm.nih.gov/pubmed/29323233 http://dx.doi.org/10.1038/s41598-017-19090-3 |
work_keys_str_mv | AT kimrokyeon grapheneanaloguein111orientedbabio3bilayerheterostructuresfortopologicalelectronics AT yujaejun grapheneanaloguein111orientedbabio3bilayerheterostructuresfortopologicalelectronics AT jinhosub grapheneanaloguein111orientedbabio3bilayerheterostructuresfortopologicalelectronics |