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The space charge limited current and huge linear magnetoresistance in silicon

Huge magnetoresistance in space charge regime attracts broad interest on non-equilibrium carrier transport under high electric field. However, the accurate fitting for the current-voltage curves from Ohmic to space charge regime under magnetic fields has not been achieved quantitatively. We conjectu...

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Detalles Bibliográficos
Autores principales: Liu, Y., Wang, H., Jin, X., Zhang, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5768776/
https://www.ncbi.nlm.nih.gov/pubmed/29335502
http://dx.doi.org/10.1038/s41598-017-19022-1
Descripción
Sumario:Huge magnetoresistance in space charge regime attracts broad interest on non-equilibrium carrier transport under high electric field. However, the accurate fitting for the current-voltage curves from Ohmic to space charge regime under magnetic fields has not been achieved quantitatively. We conjecture that the localized intensive charge dynamic should be taken into consideration. Here, by introducing a field-dependent dielectric constant, for the first time, we successfully simulate the current-voltage curves of covalent crystal silicon wafers under different magnetic fields (0–1 Tesla). The simulation reveals that the optical phonon, instead of the acoustic phonon, plays a major role for the carriers transport under magnetic fields in space charge regime.