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Strong modulation of second-harmonic generation with very large contrast in semiconducting CdS via high-field domain
Dynamic control of nonlinear signals is critical for a wide variety of optoelectronic applications, such as signal processing for optical computing. However, controlling nonlinear optical signals with large modulation strengths and near-perfect contrast remains a challenging problem due to intrinsic...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5768866/ https://www.ncbi.nlm.nih.gov/pubmed/29335589 http://dx.doi.org/10.1038/s41467-017-02548-3 |
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author | Ren, Ming-Liang Berger, Jacob S. Liu, Wenjing Liu, Gerui Agarwal, Ritesh |
author_facet | Ren, Ming-Liang Berger, Jacob S. Liu, Wenjing Liu, Gerui Agarwal, Ritesh |
author_sort | Ren, Ming-Liang |
collection | PubMed |
description | Dynamic control of nonlinear signals is critical for a wide variety of optoelectronic applications, such as signal processing for optical computing. However, controlling nonlinear optical signals with large modulation strengths and near-perfect contrast remains a challenging problem due to intrinsic second-order nonlinear coefficients via bulk or surface contributions. Here, via electrical control, we turn on and tune second-order nonlinear coefficients in semiconducting CdS nanobelts from zero to up to 151 pm V(−1), a value higher than other intrinsic nonlinear coefficients in CdS. We also observe ultrahigh ON/OFF ratio of >10(4) and modulation strengths ~200% V(−1) of the nonlinear signal. The unusual nonlinear behavior, including super-quadratic voltage and power dependence, is ascribed to the high-field domain, which can be further controlled by near-infrared optical excitation and electrical gating. The ability to electrically control nonlinear optical signals in nanostructures can enable optoelectronic devices such as optical transistors and modulators for on-chip integrated photonics. |
format | Online Article Text |
id | pubmed-5768866 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-57688662018-01-19 Strong modulation of second-harmonic generation with very large contrast in semiconducting CdS via high-field domain Ren, Ming-Liang Berger, Jacob S. Liu, Wenjing Liu, Gerui Agarwal, Ritesh Nat Commun Article Dynamic control of nonlinear signals is critical for a wide variety of optoelectronic applications, such as signal processing for optical computing. However, controlling nonlinear optical signals with large modulation strengths and near-perfect contrast remains a challenging problem due to intrinsic second-order nonlinear coefficients via bulk or surface contributions. Here, via electrical control, we turn on and tune second-order nonlinear coefficients in semiconducting CdS nanobelts from zero to up to 151 pm V(−1), a value higher than other intrinsic nonlinear coefficients in CdS. We also observe ultrahigh ON/OFF ratio of >10(4) and modulation strengths ~200% V(−1) of the nonlinear signal. The unusual nonlinear behavior, including super-quadratic voltage and power dependence, is ascribed to the high-field domain, which can be further controlled by near-infrared optical excitation and electrical gating. The ability to electrically control nonlinear optical signals in nanostructures can enable optoelectronic devices such as optical transistors and modulators for on-chip integrated photonics. Nature Publishing Group UK 2018-01-15 /pmc/articles/PMC5768866/ /pubmed/29335589 http://dx.doi.org/10.1038/s41467-017-02548-3 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Ren, Ming-Liang Berger, Jacob S. Liu, Wenjing Liu, Gerui Agarwal, Ritesh Strong modulation of second-harmonic generation with very large contrast in semiconducting CdS via high-field domain |
title | Strong modulation of second-harmonic generation with very large contrast in semiconducting CdS via high-field domain |
title_full | Strong modulation of second-harmonic generation with very large contrast in semiconducting CdS via high-field domain |
title_fullStr | Strong modulation of second-harmonic generation with very large contrast in semiconducting CdS via high-field domain |
title_full_unstemmed | Strong modulation of second-harmonic generation with very large contrast in semiconducting CdS via high-field domain |
title_short | Strong modulation of second-harmonic generation with very large contrast in semiconducting CdS via high-field domain |
title_sort | strong modulation of second-harmonic generation with very large contrast in semiconducting cds via high-field domain |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5768866/ https://www.ncbi.nlm.nih.gov/pubmed/29335589 http://dx.doi.org/10.1038/s41467-017-02548-3 |
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