Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation

Scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low energy electron diffraction have been used to follow the growth of Si films on Ag(111) at various temperatures. Using a simple growth model, we have simulated the distribution of film thickness as a function of coverage d...

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Detalles Bibliográficos
Autores principales: Curcella, Alberto, Bernard, Romain, Borensztein, Yves, Pandolfi, Silvia, Prévot, Geoffroy
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5769081/
https://www.ncbi.nlm.nih.gov/pubmed/29379700
http://dx.doi.org/10.3762/bjnano.9.7
Descripción
Sumario:Scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low energy electron diffraction have been used to follow the growth of Si films on Ag(111) at various temperatures. Using a simple growth model, we have simulated the distribution of film thickness as a function of coverage during evaporation, for the different temperatures. In the temperature regime where multilayer silicene has been claimed to form (470–500 K), a good agreement is found with AES intensity variations and STM measurements within a Ag surfactant mediated growth, whereas a model with multilayer silicene growth fails to reproduce the AES measurements.

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