Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation

Scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low energy electron diffraction have been used to follow the growth of Si films on Ag(111) at various temperatures. Using a simple growth model, we have simulated the distribution of film thickness as a function of coverage d...

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Autores principales: Curcella, Alberto, Bernard, Romain, Borensztein, Yves, Pandolfi, Silvia, Prévot, Geoffroy
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5769081/
https://www.ncbi.nlm.nih.gov/pubmed/29379700
http://dx.doi.org/10.3762/bjnano.9.7
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author Curcella, Alberto
Bernard, Romain
Borensztein, Yves
Pandolfi, Silvia
Prévot, Geoffroy
author_facet Curcella, Alberto
Bernard, Romain
Borensztein, Yves
Pandolfi, Silvia
Prévot, Geoffroy
author_sort Curcella, Alberto
collection PubMed
description Scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low energy electron diffraction have been used to follow the growth of Si films on Ag(111) at various temperatures. Using a simple growth model, we have simulated the distribution of film thickness as a function of coverage during evaporation, for the different temperatures. In the temperature regime where multilayer silicene has been claimed to form (470–500 K), a good agreement is found with AES intensity variations and STM measurements within a Ag surfactant mediated growth, whereas a model with multilayer silicene growth fails to reproduce the AES measurements.
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spelling pubmed-57690812018-01-29 Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation Curcella, Alberto Bernard, Romain Borensztein, Yves Pandolfi, Silvia Prévot, Geoffroy Beilstein J Nanotechnol Full Research Paper Scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low energy electron diffraction have been used to follow the growth of Si films on Ag(111) at various temperatures. Using a simple growth model, we have simulated the distribution of film thickness as a function of coverage during evaporation, for the different temperatures. In the temperature regime where multilayer silicene has been claimed to form (470–500 K), a good agreement is found with AES intensity variations and STM measurements within a Ag surfactant mediated growth, whereas a model with multilayer silicene growth fails to reproduce the AES measurements. Beilstein-Institut 2018-01-05 /pmc/articles/PMC5769081/ /pubmed/29379700 http://dx.doi.org/10.3762/bjnano.9.7 Text en Copyright © 2018, Curcella et al. https://creativecommons.org/licenses/by/4.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms)
spellingShingle Full Research Paper
Curcella, Alberto
Bernard, Romain
Borensztein, Yves
Pandolfi, Silvia
Prévot, Geoffroy
Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation
title Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation
title_full Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation
title_fullStr Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation
title_full_unstemmed Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation
title_short Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation
title_sort transition from silicene monolayer to thin si films on ag(111): comparison between experimental data and monte carlo simulation
topic Full Research Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5769081/
https://www.ncbi.nlm.nih.gov/pubmed/29379700
http://dx.doi.org/10.3762/bjnano.9.7
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