Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes

We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis. The current-voltage characteristics of the devices were found rectifying, and their direction of rectification could be determined by vo...

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Detalles Bibliográficos
Autores principales: Ho, Hsiang-Hsi, Lin, Chun-Lung, Tsai, Wei-Che, Hong, Liang-Zheng, Lyu, Cheng-Han, Hsu, Hsun-Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5773461/
https://www.ncbi.nlm.nih.gov/pubmed/29349636
http://dx.doi.org/10.1186/s11671-017-2423-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5773461/
https://www.ncbi.nlm.nih.gov/pubmed/29349636
http://dx.doi.org/10.1186/s11671-017-2423-z

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