Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers

The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained. The phase diagrams of the superstructure change du...

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Detalles Bibliográficos
Autores principales: Timofeev, Vyacheslav, Nikiforov, Alexandr, Tuktamyshev, Artur, Mashanov, Vladimir, Yesin, Michail, Bloshkin, Aleksey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5775191/
https://www.ncbi.nlm.nih.gov/pubmed/29352352
http://dx.doi.org/10.1186/s11671-017-2429-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5775191/
https://www.ncbi.nlm.nih.gov/pubmed/29352352
http://dx.doi.org/10.1186/s11671-017-2429-6

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