Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface

Despite the scientific and technological importance of removing interface dangling bonds, even an ideal model of a dangling-bond-free interface between GaN and an insulator has not been known. The formation of an atomically thin ordered buffer layer between crystalline GaN and amorphous SiO(2) would...

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Detalles Bibliográficos
Autores principales: Nishio, Kengo, Yayama, Tomoe, Miyazaki, Takehide, Taoka, Noriyuki, Shimizu, Mitsuaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5780416/
https://www.ncbi.nlm.nih.gov/pubmed/29362443
http://dx.doi.org/10.1038/s41598-018-19283-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5780416/
https://www.ncbi.nlm.nih.gov/pubmed/29362443
http://dx.doi.org/10.1038/s41598-018-19283-4

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