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Graphene-based nonvolatile terahertz switch with asymmetric electrodes

We propose a nonvolatile terahertz (THz) switch which is able to perform the switching with transient stimulus. The device utilizes graphene as its floating-gate layer, which changes the transmissivity of THz signal by trapping the tunneling charges. The conventional top-down electrode configuration...

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Autores principales: Li, Yan, Yu, Hui, Qiu, Xinyu, Dai, Tingge, Jiang, Jianfei, Wang, Gencheng, Zhang, Qiang, Qin, Yali, Yang, Jianyi, Jiang, Xiaoqing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5784144/
https://www.ncbi.nlm.nih.gov/pubmed/29367596
http://dx.doi.org/10.1038/s41598-018-20047-3
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author Li, Yan
Yu, Hui
Qiu, Xinyu
Dai, Tingge
Jiang, Jianfei
Wang, Gencheng
Zhang, Qiang
Qin, Yali
Yang, Jianyi
Jiang, Xiaoqing
author_facet Li, Yan
Yu, Hui
Qiu, Xinyu
Dai, Tingge
Jiang, Jianfei
Wang, Gencheng
Zhang, Qiang
Qin, Yali
Yang, Jianyi
Jiang, Xiaoqing
author_sort Li, Yan
collection PubMed
description We propose a nonvolatile terahertz (THz) switch which is able to perform the switching with transient stimulus. The device utilizes graphene as its floating-gate layer, which changes the transmissivity of THz signal by trapping the tunneling charges. The conventional top-down electrode configuration is replaced by a left-right electrode configuration, so THz signals could transmit through this device with the transmissivity being controlled by voltage pulses. The two electrodes are made of metals with different work functions. The resultant asymmetrical energy band structure ensures that both electrical programming and erasing are viable. With the aid of localized surface plasmon resonances in graphene ribbon arrays, the modulation depth is 89% provided that the Femi level of graphene is tuned between 0 and 0.2 eV by proper voltage pulses.
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spelling pubmed-57841442018-02-07 Graphene-based nonvolatile terahertz switch with asymmetric electrodes Li, Yan Yu, Hui Qiu, Xinyu Dai, Tingge Jiang, Jianfei Wang, Gencheng Zhang, Qiang Qin, Yali Yang, Jianyi Jiang, Xiaoqing Sci Rep Article We propose a nonvolatile terahertz (THz) switch which is able to perform the switching with transient stimulus. The device utilizes graphene as its floating-gate layer, which changes the transmissivity of THz signal by trapping the tunneling charges. The conventional top-down electrode configuration is replaced by a left-right electrode configuration, so THz signals could transmit through this device with the transmissivity being controlled by voltage pulses. The two electrodes are made of metals with different work functions. The resultant asymmetrical energy band structure ensures that both electrical programming and erasing are viable. With the aid of localized surface plasmon resonances in graphene ribbon arrays, the modulation depth is 89% provided that the Femi level of graphene is tuned between 0 and 0.2 eV by proper voltage pulses. Nature Publishing Group UK 2018-01-24 /pmc/articles/PMC5784144/ /pubmed/29367596 http://dx.doi.org/10.1038/s41598-018-20047-3 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Li, Yan
Yu, Hui
Qiu, Xinyu
Dai, Tingge
Jiang, Jianfei
Wang, Gencheng
Zhang, Qiang
Qin, Yali
Yang, Jianyi
Jiang, Xiaoqing
Graphene-based nonvolatile terahertz switch with asymmetric electrodes
title Graphene-based nonvolatile terahertz switch with asymmetric electrodes
title_full Graphene-based nonvolatile terahertz switch with asymmetric electrodes
title_fullStr Graphene-based nonvolatile terahertz switch with asymmetric electrodes
title_full_unstemmed Graphene-based nonvolatile terahertz switch with asymmetric electrodes
title_short Graphene-based nonvolatile terahertz switch with asymmetric electrodes
title_sort graphene-based nonvolatile terahertz switch with asymmetric electrodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5784144/
https://www.ncbi.nlm.nih.gov/pubmed/29367596
http://dx.doi.org/10.1038/s41598-018-20047-3
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