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Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth par...

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Detalles Bibliográficos
Autores principales:	Bolshakov, Alexey D, Mozharov, Alexey M, Sapunov, Georgiy A, Shtrom, Igor V, Sibirev, Nickolay V, Fedorov, Vladimir V, Ubyivovk, Evgeniy V, Tchernycheva, Maria, Cirlin, George E, Mukhin, Ivan S
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2018
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5789400/ https://www.ncbi.nlm.nih.gov/pubmed/29441260 http://dx.doi.org/10.3762/bjnano.9.17

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